absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave,50 to 60hz,gate open 600 v i t(rms) r.m.s on-state current 180 conduction angle 8 a i tsm surge on-state current 1/2 cycle, 60hz, sine wave non-repetitive 80 a di/dt critical rate of rise of on-state current ipk=20a, igt=20ma 50 a /us p g(av) forward average gate power dissipation t j = 110 c 0.5 w t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c CP6C60 may , 2010. rev.1 1/6 features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 8 a ) isolated, non-isolated type general description apollo electrons scr is suitable for the application where requiring high bidirectional blocking voltage capability and also suit able for over voltage protection, mo tor control circuit in power tool, inrush cur- rent limit circuit and heating control system. 2. anode 3.gate 1.cathode symbol i t(rms) = a i tsm = 0a bv drm = 600v standard gate silicon controlled rectifiers to-220 1 2 3 copyright @ apollo electron co., ltd. all rights reserved. 1 2 3 to-220f
electrical characteristics ( t j = 25 c unless otherwise noted ) symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current vak = vdrm g g g g g g g g g g t t 1 ma v tm peak on-state voltage (1) i t = 8 a --- 1.7 v igt gate trigger current (2) vd = 12 v, rl=100 20 ma v gt gate trigger voltage (2) v d = 12 v, r l =100 1.3 v dv/dt critical rate of rise off-state voltage linear slope up to v = d = v drm 67% , gate open t j = 110c 20 v/us ih holding current vd = 24v, igt=50ma 30 ma 2/6 CP6C60
-50 0 50 100 150 0.1 1 10 i gt (t o c) i gt (25 o c) junction temperature[ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 transient thermal impedance [ o c/w] time (sec) 0.51.01.52.02.53.03.54.0 1 10 100 125 o c 25 o c on-state current [a] on-state voltage [v] 01234 40 60 80 100 120 140 = 180 o max. allowable case temperature [ o c] average on-state current [a] 10 -1 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 i gm (2a) v gd (0.2v) p g(av) (0.5w) p gm (5w) v gm (5v) 25 o c gate voltage [v] gate current [ma] : conduction angl e 360 2 CP6C60 -50 0 50 100 150 0.1 1 10 v gt (t o c) v gt (25 o c) junction temperature[ o c] 3/6 fig 1. gate characteristics fi g 2. maximum case temperature fig 3. typical forward voltage fig 4. thermal response fig 6. typical gate trigger current vs. junction temperature fig 5. typical gate trigger voltage vs. junction temperature
01234 0 1 2 3 4 5 6 7 = 180 o = 120 o = 90 o = 60 o = 30 o max. average power dissipation [w] average on-state current [a] -50 0 50 100 150 0.1 1 10 i h (t o c) i h (25 o c) junction temperature[ o c] 4/6 CP6C60 fig 8. power dissipation fig 7. typical holding current
5/6 CP6C60 to-220 package dimension to-220 package dimension min max min max a 0.14 0.19 3.56 4.83 a1 0.02 0.055 0.51 1.4 a2 0.08 0.115 2.03 2.92 b 0.015 0.04 0.38 1.02 b2 0.045 0.07 1.14 1.78 c 0.014 0.024 0.36 0.61 d 0.56 0.65 14.22 16.51 e 0.096 0.104 2.44 2.64 e 0.38 0.42 9.65 10.67 h1 0.23 0.27 5.84 6.86 l 0.5 0.58 12.7 14.73 l1 - 0.25 - 6.35 p 0.139 0.161 3.53 4.09 q 0.1 0.135 2.54 3.43 inches millimeters dim
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 13.47 13.73 0.530 0.540 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2 . 5 4 0 . 1 0 0 k5 . 0 8 0 . 2 0 0 l 2.51 2.62 0.099 0.103 m 1.25 1.55 0.049 0.061 n 0.45 0.63 0.018 0.025 o 0.6 1.0 0.024 0.039 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension 6 6/6 CP6C60 1. cathode 2. anode 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 2
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